features trenchfet power mosfet 175 c junction temperature pwm optimized for high efficiency 100% r g tested applications high-side synchronous buck dc/dc conversion ? desktop ? server SUR50N024-09P vishay siliconix new product document number: 73012 s-41265?rev. a, 05-jul-04 www.vishay.com 1 n-channel 22-v (d-s) 175 c mosfet product summary v ds (v) r ds(on) ( ) i d (a) d 24 c 0.0095 @ v gs = 10 v 49 24 c 0.017 @ v gs = 4.5 v 36 d g s n-channel mosfet to-252 reverse lead dpak top view drain connected to tab ordering information: SUR50N024-09P?e3 SUR50N024-09P-t4?e3 (alternate tape orientation) s gd absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol limit unit drain-source pulse v oltage v ds(pulse) 24 c drain-source voltage v ds 22 v gate-source voltage v gs 20 continuous drain current a t c = 25 c i d 49d continuous drain current a t c = 100 c i d 34 d pulsed drain current i dm 100 a continuous source current (diode conduction) a i s 4.3 avalanche current, single pulse l = 0.1 mh i as 29 avalanche energy , single pulse e as 42 mj maximum power dissipation t a = 25 c p d 6.5 a w maximum power dissipation t c = 25 c p d 39.5 w operating junction and storage temperature range t j , t stg ? 55 to 175 c thermal resistance ratings parameter symbol typical maximum unit mi j ti tabit a t 10 sec r 19 23 maximum junction-to-ambient a steady state r thja 40 50 c/w maximum junction-to-case r thjc 3.1 3.8 c/w notes a. surface mounted on fr4 board, t 10 sec. b. limited by package c. pulse condition: t a = 105 c, 50 ns, 300 khz operation d. calculation based on maximum allowable junction temperature. package limitation current is 25 a.
SUR50N024-09P vishay siliconix new product www.vishay.com 2 document number: 73012 s-41265?rev. a, 05-jul-04 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ a max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 22 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.8 3.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 22 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 22 v, v gs = 0 v, t j = 125 c 50 a on-state drain current b i d(on) v ds = 5 v, v gs = 10 v 50 a v gs = 10 v, i d = 20 a 0.008 0.0095 drain-source on-state resistance b r ds(on) v gs = 10 v, i d = 20 a, t j = 125 c 0.014 drain source on state resistance r ds(on) v gs = 4.5 v, i d = 20 a 0.0135 0.017 forward transconductance b g fs v ds = 15 v, i d = 20 a 15 s dynamic a input capacitance c iss 1300 output capacitance c oss v gs = 0 v, v ds = 10 v, f = 1 mhz 470 pf reverse transfer capacitance c rss 275 p gate resistance r g 1.6 4.0 6.0 total gate charge c q g 10.5 16 gate-source charge c q gs v ds = 10 v, v gs = 4.5 v, i d = 50 a 4.2 nc gate-drain charge c q gd v ds 10 v, v gs 4.5 v, i d 50 a 4.0 nc turn-on delay time c t d(on) 8 12 rise time c t r v dd = 10 v, r l = 0.2 10 15 ns turn-off delay time c t d(off) v dd = 10 v , r l = 0 . 2 i d 50 a, v gen = 10 v, r g = 2.5 25 40 ns fall time c t f g 12 20 source-drain diode ratings and characteristic (t c = 25 c) pulsed current i sm 100 a diode forward voltage b v sd i f = 50 a, v gs = 0 v 1.2 1.5 v source-drain reverse recovery time t rr i f = 50 a, di/dt = 100 a/ s 35 70 ns notes a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2%. c. independent of operating temperature. typical characteristics (25 c unless noted) 0 20 40 60 80 100 0246810 0 20 40 60 80 100 0123456 output characteristics transfer characteristics v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d 25 c 125 c t c = ? 55 c v gs = 10 thru 6 v 3 v 4 v 5 v
SUR50N024-09P vishay siliconix new product document number: 73012 s-41265?rev. a, 05-jul-04 www.vishay.com 3 typical characteristics (25 c unless noted) 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0 20406080100 0 2 4 6 8 10 048121620 0 10 20 30 40 50 60 0 1020304050 0 400 800 1200 1600 2000 048121620 capacitance gate charge transconductance on-resistance vs. drain current ? gate-to-source voltage (v) ? on-resistance ( q g ? total gate charge (nc) i d ? drain current (a) v ds ? drain-to-source voltage (v) c ? capacitance (pf) r ds(on) ) v gs ? transconductance (s) g fs v ds = 10 v i d = 50 a v gs = 10 v v gs = 4.5 v c rss t c = ? 55 c 25 c 125 c c iss i d ? drain current (a) c oss 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ? 50 ? 25 0 25 50 75 100 125 150 175 on-resistance vs. junction t emperature source-drain diode forward voltage t j ? junction temperature ( c) v sd ? source-to-drain voltage (v) ? source current (a) i s 100 1 0.3 0.6 0.9 1.2 1.5 v gs = 10 v i d = 30 a t j = 25 c t j = 150 c 0 10 r ds(on) ? on-resiistance (normalized)
SUR50N024-09P vishay siliconix new product www.vishay.com 4 document number: 73012 s-41265?rev. a, 05-jul-04 thermal ratings 0 5 10 15 20 25 0 25 50 75 100 125 150 175 safe operating area v ds ? drain-to-source voltage (v) ? drain current (a) i d 1000 10 0.01 0.1 1 10 100 1 100 t a = 25 c single pulse normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) 2 1 0.1 0.01 10 ? 4 10 ? 3 10 ? 2 10 ? 1 110 normalized effective transient thermal impedance maximum drain current vs. ambiemt t emperature t a ? ambient t emperature ( c) ? drain current (a) i d 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 1 ms 10 ms 100 ms dc 10, 100 s 1 s 1000 100 0.1 10 s 100 s limited by r ds(on)
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